M25PVMN6TP TR Micron Technology Inc. | M25PVMN6TPCT-ND Digi- Key Part Number, M25PVMN6TPCT-ND HTML Datasheet, M25P M25PVMN6P STMicroelectronics NOR Flash 16MBIT SFLASH MEM datasheet, inventory & pricing. Part, M25P Category. Description, 16 Mbit, Low Voltage, Serial Flash Memory With 50 MHZ Spi Bus Interface. Company, ST Microelectronics, Inc. Datasheet.
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The device consumption drops to I CC1.
When set to 1such a cycle is in progress, when reset to 0 no such cycle is in progress. ICC2 max value changed to 10uA Dec 0. Data is shifted out on the falling edge of Serial Clock C. The address is automatically incremented to the next higher address after each byte of data is shifted out. Protection modes 25 Table 8. The instruction sequence is shown in Figure S08 wide – 8 lead Plastic Small Outline, mils body width, package mechanical data 50 Table The instruction set is listed in Table 4.
STMicroelectronics NV and its subsidiaries “ST” reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
Capacitance 38 Table Grade 3 temperature range added. Search the history of over billion web pages on the Internet.
Micron Tech M25PVMW6TG – PDF Datasheet – FLASH In Stock |
Any Read Identification RDID instruction while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that datashheet in progress. No other instruction must be issued while the device is in Deep Power-down mode.
When the highest address is reached, the address counter rolls over to OOOOOOh, allowing the read sequence to be continued indefinitely. Ordering information scheme 52 Table This is followed by the bit device identification, stored in the memory, being shifted out on Serial Data Output Qeach bit being shifted out during the falling edge of Serial Clock C.
Each page is bytes wide. The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in the Standby mode.
Full text of “Datasheet: M25P16”
Each device in a datasgeet should have the V cc rail decoupled by a suitable capacitor close to the package pins. Driving Chip Select S High deselects the device, and puts the device in the Standby mode if there is no internal cycle currently in progress. Protected area sizes 14 Table 3. This starts an internal Erase cycle of duration tgE or t BE.
M25P16 SPI flash memory + LPC1769 – prototype work great, designed PCB not so good…
Operating conditions Symbol Parameter Min. The memory can be programmed 1 to bytes at a time, using the Page Program instruction. But this mode is not the Deep Power- down mode.
It receives instructions, addresses, and the data to be programmed.
Chip Select S must be driven Low for the entire duration of the sequence. Data retention and endurance and Table Bus master and memory devices on the SPI bus updated and Note 2 added. Bus master and memory devices on the SPI bus 10 Figure 5. That is, Chip Select S must driven High when the number of clock pulses after Chip Select S being driven Low is an exact multiple of All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues unaffected.
Every instruction sequence starts with a one-byte instruction code. At Power-up, the device is in the following state: Chip Select S must be driven High after the eighth bit of the instruction code has been latched in, otherwise the Bulk Erase instruction is not executed.
These parameters are characterized only. Note 1 added to Table S08W – 8 lead Plastic Small Outline, mils body width, package outline 1. This is to ensure that the state of the internal logic remains unchanged from the moment of entering the Hold condition.
All other names are the property of their respective owners. Attempts to write to the Status Register are rejected, and are not accepted for execution. S08N package specifications updated see Figure 29 and Table The old-style Electronic Signature is supported for reasons of backward compatibility, only, and should not be used for new designs.
Sector Erase SE instruction sequence 30 Figure